Research Article

Design and Analysis of Nanoscaled Recessed-S/D SOI MOSFET-Based Pseudo-NMOS Inverter for Low-Power Electronics

Table 2

Performance comparison of SMG, DMG, and TMG Re-S/D SOI MOSFET.

ParametersSMG Re-S/DDMG Re-S/DTMG Re-S/D

Threshold voltage (V)0.2840.3790.432
DIBL (mV/V)24.824.624.5
Subthreshold slope (mV/dec)68.167.566.9
Ion/Ioff2.052 × 1083.316 × 1083.537 × 108
Transconductance (S/µm)5.559 × 10−45.903 × 10−46.041 × 10−4