Effect of the Thickness of Insulator Polymeric Films on the Memory Behavior: The Case of the Polymethylmethacrylate and the Polystyrene
Figure 8
I-V behavior of a 17 nm PMMA device as a function of the compliance current. The electroforming of the device was realized using a compliance current of 20 mA, and the bias voltage was swept from 0 to 8 V. To study the effect of the compliance current on the formation and rupture of filaments, these were set at (a) 40 mA, (b) 60 mA, (c) 80 mA, and (d) 60 mA (see text). The I-V measurements were sequentially performed on the MIM device.
