Investigation of the Performance of a Sb₂S₃-Based Solar Cell with a Hybrid Electron Transport Layer (h-ETL): A Simulation Approach Using SCAPS-1D Software

Table 7

Optimized parameters of the Sb₂S₃ solar cell.

Optimized parameters	Values
Absorber thickness	0.28 μm
Absorber bulk defect density	10^10 cm^-3
Absorber acceptor concentration	10^16 cm^-3
Thickness of IGZO ELT and MoO3 HTL materials	0.03 μm and 0.1 μm
IGZO/Sb2S3 interface defect density	10^6 cm^-2
and resistances	4 Ω·cm^2 and 800 Ω·cm^2
Back contact extraction energy (nickel)	5.1 eV