Advances in the growth, analysis, and characterization of various narrow-gap semiconductors and low-dimensional optoelectronic device structures have brought revolution into the modern day’s information and communication technology including optical communication and computing systems. The main objective of this special issue is to include the recent advances in the experimental and theoretical research related to the growth, transport, and infrared properties of narrow-gap semiconductors and the fabrication, characterization, analysis, and simulation of various low-dimensional devices including quantum and nanostructures using narrow-gap semiconductors for optoelectronic applications. The aim of this special issue is to bring together in one publication the outstanding papers reporting new and original theoretical, experimental, and/or simulation works in the following areas related to optoelectronic applications. Potential topics include, but are not limited to:

• II-VI narrow-gap semiconductors (e.g., HgCdTe) and their heterostructures
• Narrow-gap III-V semiconductors (e.g., InAs, GaSb, and AlSb) and their heterostructures and nanostructures
• Narrow-gap tunneling phenomena
• Spintronic and spin-photonic devices (e.g., spin LEDs)
• Low-dimensional structures for infrared detectors, lasers, LEDs, terahertz emitters, and detectors
• Physics and infrared applications of quantum structures including quantum well, quantum dots, and superlattices
• Laser cooling of II-VI semiconductors

Before submission authors should carefully read over the journal’s Author Guidelines, which are located at http://www.hindawi.com/journals/tswj/guidelines/. Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/journals/tswj/optics/nagap/ according to the following timetable: