Review Article
Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices
Figure 6
characteristics before irradiation and after 20, 100, 200 and 1000 krad (SiO2) of TID for device [24]. (a) W = 200 um, L = 0.9 um, = 0.1 V, . (b) W = 200 um, L = 1.5 um, = 0.1 V, = = 0 V. (c) W = 200 um, L = 0.9 um, = 1 V, = = 0 V. (d) W = 200 um, L = 1.5 um, = 1 V, = = 0 V.
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