TY - JOUR A2 - Cirlin, George AU - De Laurentis, Martina AU - Irace, Andrea PY - 2014 DA - 2014/06/24 TI - Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect SP - 291469 VL - 2014 AB - We review successful measurement techniques for the evaluation of the recombination properties in semiconductor materials based on the optically induced free carrier absorption. All the methodologies presented share the common feature of exploiting a laser beam to excite electron-hole pairs within the volume of the sample under investigation, while the probing methods can vary according to the different methodology analyzed. As recombination properties are of paramount importance in determining the properties of semiconductor devices (i.e, bipolar transistor gain, power devices switching features, and solar cells efficiency), their knowledge allows for better understanding of experimental results and robust TCAD simulator calibration. Being contactless and applicable without any particular preparation of the sample under investigation, they have been considered attractive to monitor these parameters inline or just after production of many different semiconductor devices. SN - 2356-7643 UR - https://doi.org/10.1155/2014/291469 DO - 10.1155/2014/291469 JF - Journal of Solid State Physics PB - Hindawi Publishing Corporation KW - ER -