Nanostructured Optoelectronics: Materials and Devices
1New Jersey Institute of Technology, Newark, USA
2University of California at Santa Barbara, California, USA
3Epitaxial Laboratory Inc., New York, USA
4Vietnam National University, Ho Chi Minh City, Vietnam
Nanostructured Optoelectronics: Materials and Devices
Description
The use of nanostructure materials for optoelectronic devices, including light-emitting diodes, laser diodes, photodetectors, and photovoltaics, has attracted considerable attention recently due to their unique geometry. Nanostructures in small dimensions can be perfectly integrated into a variety of technological platforms, offering novel physical and chemical properties for the high performance optoelectronic devices. The exploitation of new nanostructures and their optical and electrical properties is necessary for their emerging practical device applications.
This special issue focuses on the most recent advances in the fields of nanostructured optoelectronics. Particularly, the scopes of this issue are in the theoretical calculation, synthesis, characterization, and application of such novel nanostructures. We call for contributions of original research articles as well as review articles which are aligned to the aforementioned scopes.
Potential topics include, but are not limited to:
- Theoretical simulation, fabrication, and characterization of novel nanostructures for photonics and photovoltaics
- Phosphor-free and phosphor-based light-emitting diodes and their applications in photonics and biophotonics
- 2D nanomaterials and nanoplasmonics for optoelectronic devices
- III-V compound semiconductors from van der Waals epitaxy
- III-V nanostructured optoelectronic devices: light-emitting diodes, laser diodes, photodetectors, and solar cells