Emerging Perovskite Optoelectronic Devices
1Xidian University, Xi'an, China
Emerging Perovskite Optoelectronic Devices
Description
Metal halide perovskites are the subject of increasing amounts of research, due to their obvious advantages for applications in optoelectonics. These include a high absorption coefficient, high photoluminescence quantum yield, high charge carrier mobility, compositional tunability, and solution processability.
Perovskites have been actively studied in the field of optoelectronics, including solar cells, light-emitting diodes, and photodetectors. However, to increase commercialization, the scientific community has focused on the challenges associated with composition adjusting, surface modification, the operational stability of hybrid perovskites, the replacement of lead with less toxic metals, and interface engineering for surface passivation and charge extraction. This requires extensive and rigorous studies from the perspective of both materials and devices.
The aim of this Special Issue is to consolidate the recent development in perovskite materials and devices. We welcome papers that study the preparation and characterization of perovskite materials and their applications in various optoelectronics. This includes studies on the formation, structure, and morphology of perovskites, and works about the optimization of bandgap, efficiency, toxicity, long-term stability, and hysteresis in current–voltage characteristics, as well as investigations for their use in various optoelectronic applications, such as solar cells, LEDs, and photodetectors.
Potential topics include but are not limited to the following:
- Lead-based and lead-free perovskites
- 2D/ 3D perovskites
- Perovskite quantum dots
- Advances in synthesis, thin-film deposition, and characterization
- Charge selective contacts
- Electrodes and substrates
- Device architectures
- Computational modeling
- Light emitting diodes
- Photodetectors
- Lasers and optical amplifiers
- Material and device stability
- Interface engineering for surface passivation and charge extraction