Solid-State Lighting with High Brightness, High Efficiency, and Low Cost
1Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan
2Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 100044, China
3Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
4Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
Solid-State Lighting with High Brightness, High Efficiency, and Low Cost
Description
Recently, with the awakening of global ecoconsciousness, the issue of waste pollution from the conventional lighting has attracted wide attention. To achieve the advanced lighting with the energy-saving and environmental protection capabilities, the technologies of solid-state lighting have been developed rapidly. In all solid-state lighting applications, light-emitting diode (LED) is the most popular technique due to its advantages, for example, the small volume, the long lifetime, the high reliability, the low power consumption, and the nonpollution. Up to now, the nitride-based materials are maturely developed to apply for LED applications. However, to obtain the LED devices with high brightness, high efficiency, and low cost, there are still some techniques to be improved, especially for the nitride-epilayer growth with low defect density and device fabrication with high heat dissipation.
We invite investigators to submit original research articles and review articles that will propose the continuing efforts in the techniques of LEDs with high brightness, high efficiency, and low cost. We are particularly interested in papers describing the new methods of nitride-epilayer growth and thermally conductive device to enhance the optoelectronic performance of LEDs. Potential topics include, but are not limited to:
- Development in patterned sapphire substrate techniques to achieve high-quality nitride epilayer and device
- Development in defect-density reduction of nitride epilayer by inserting the buffer
- LEDs embedded with the nanoscale structure to enhance the epilayer quality and device performance
- Development in defect-etching technique on nitride epilayer
- Improvement in the heat dissipation of LED devices by inserting new materials with high thermal conductivity
- Advanced package methods of LED devices to reach high dissipation and high efficiency
- Recent advances in GaN-on-Si: from growth to LED devices
- Recent advances in ultraviolet LEDs (UV-LEDs) technology
Before submission authors should carefully read over the journal’s Author Guidelines, which are located at http://www.hindawi.com/journals/ijp/guidelines/. Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/journals/ijp/bright/ according to the following timetable: