Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga0.5In0.5P as a Back Surface Field (BSF): A Simulation Approach

<div>Electronic properties of AlxGa1-xAs and GayIn1-yP materials at 300 K.</div>

International Journal of Photoenergy

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Table 2

Table 2: Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga0.5In0.5P as a Back Surface Field (BSF): A Simulation Approach

Table 2 | Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga0.5In0.5P as a Back Surface Field (BSF): A Simulation Approach 