Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga<sub>0.5</sub>In<sub>0.5</sub>P as a Back Surface Field (BSF): A Simulation Approach

<div>Capacitance-voltage (C-V) characteristics of the GaAs-based solar cell without and with Ga<sub>0.5</sub>In<sub>0.5</sub>P BSF layer.</div>

International Journal of Photoenergy

fig4

Figure 4

Figure 4: Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga<sub>0.5</sub>In<sub>0.5</sub>P as a Back Surface Field (BSF): A Simulation Approach 

Figure 4 | Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga0.5In0.5P as a Back Surface Field (BSF): A Simulation Approach 