Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga<sub>0.5</sub>In<sub>0.5</sub>P as a Back Surface Field (BSF): A Simulation Approach

<div>(a) Current-voltage (J-V) characteristics and (b) quantum efficiency of the GaAs-based solar cell without and with Ga<sub>0.5</sub>In<sub>0.5</sub>P BSF layer.</div>

International Journal of Photoenergy

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Figure 3: Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga<sub>0.5</sub>In<sub>0.5</sub>P as a Back Surface Field (BSF): A Simulation Approach 

Figure 3 | Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga0.5In0.5P as a Back Surface Field (BSF): A Simulation Approach 