Monocrystalline Silicon PERC Solar Cell with Rear-Side AlO_x Film Formed by Furnace Oxidation

Table 1

Lifetimes measured after first annealing at 400°C with a time duration of 10 minutes, back-side SiN_x deposition, and after second annealing at various temperatures with a time duration of 10 or 20 minutes. The recovery percentage is defined as the ratio of the lifetime after the second annealing to that after the first annealing.

Lifetime (μs) after first annealing	Lifetime (μs) after back-side SiNx deposition	Temperature (°C) of second annealing	Time duration (min) of second annealing	Lifetime (μs) after second annealing	Recovery percentage (%)
43.02	18.72	400	10	42.48	99
46.54	18.69		20	45.36	97
43.15	20.88	500	10	36.3	84
45.41	14.77		20	30.93	68
40.39	12.46	600	10	29.72	74
35.81	17.01		20	26.46	74