Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Figure 8

FTIR transmission spectra of a-SiO_𝑥:H(i) films with different process temperatures. O in the film tends to be bonded in higher order configuration with increasing temperature. The diminishing peak at 640 cm⁻¹ and 2000 cm⁻¹ indicates the effusion of H atoms. The disappearance of doublet at 845 cm⁻¹ and 890 cm⁻¹ indicates the optimised temperature. The lines are guide to the eye.