Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

<table>Effective lifetime as a function of process temperature. A relatively large process window is observed, which makes the a-<svg height="15.65" id="M87" style="vertical-align:-3.21404pt" version="1.1" viewbox="0 0 32.612499 15.65" width="32.612499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>:H films less sensitive to deposition temperature. The line is a guide to the eye. The inset shows the sample structure for lifetime extraction.</table>

International Journal of Photoenergy

fig7

Figure 7

Figure 7: Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide 

Figure 7 | Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide 