Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Figure 4

FTIR transmission spectra of a-SiO_𝑥:H(i) films under different 𝜒_𝑜. Higher O content in the film is observed with increasing CO₂ partial pressure, with Si–H(SiO₂) being the dominant bonding configuration. 𝐶_H increases with O content at first due to O facilitated inclusion but reduces beyond the optimal 𝜒_𝑜 due to O induced effusion. Doublet at 845 cm⁻¹ and 890 cm⁻¹ shows evidence of low temperature processing. The lines are guides for the eye.