Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

<table>(a) a-<svg height="15.65" id="M42" style="vertical-align:-3.21404pt" version="1.1" viewbox="0 0 32.612499 15.65" width="32.612499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,25.275,15.45)"><path d="M536 404q0 -17 -13.5 -31.5t-26.5 -14.5q-8 0 -15 10q-11 14 -25 14q-22 0 -67 -50q-47 -52 -68 -82l37 -102q31 -88 55 -88t78 59l16 -23q-32 -48 -68.5 -78t-65.5 -30q-19 0 -37.5 20t-29.5 53l-41 116q-72 -106 -114.5 -147.5t-79.5 -41.5q-21 0 -34.5 14t-13.5 37
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</svg>:H(i) thin film thickness as a function of deposition time; (b) <svg height="12.15" id="M43" style="vertical-align:-3.22281pt" version="1.1" viewbox="0 0 21.2125 12.15" width="21.2125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.863)"><path d="M471 456q-22 -60 -37 -85q-20 -3 -84 -3q-9 0 -29 2t-29 2q-38 -145 -54 -234q-15 -80 14 -80q23 0 68 38l14 -25q-78 -83 -137 -83q-50 0 -50 64q0 25 7 57l67 266q-57 4 -98 -9t-80 -49l-20 21q14 18 27 31t36.5 30t56.5 26t73 9q26 0 82.5 -2t89.5 -2q21 0 32 5t24 24
z" id="x1D70F"></path></g>
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</svg> as a function of a-<svg height="15.65" id="M44" style="vertical-align:-3.21404pt" version="1.1" viewbox="0 0 32.612499 15.65" width="32.612499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.362)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g><g transform="matrix(.017,-0,0,-.017,8.018,11.362)"><path d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" id="x69"></path></g><g transform="matrix(.017,-0,0,-.017,12.574,11.362)"><path d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" id="x4F"></path></g>
<g transform="matrix(.012,-0,0,-.012,25.275,15.45)"><path d="M536 404q0 -17 -13.5 -31.5t-26.5 -14.5q-8 0 -15 10q-11 14 -25 14q-22 0 -67 -50q-47 -52 -68 -82l37 -102q31 -88 55 -88t78 59l16 -23q-32 -48 -68.5 -78t-65.5 -30q-19 0 -37.5 20t-29.5 53l-41 116q-72 -106 -114.5 -147.5t-79.5 -41.5q-21 0 -34.5 14t-13.5 37
q0 16 13.5 31.5t28.5 15.5q12 0 17 -11q5 -10 25 -10q22 0 57.5 36t89.5 111l-40 108q-22 58 -36 58q-21 0 -67 -57l-19 20q81 107 125 107q17 0 30 -22t39 -88l22 -55q68 92 108.5 128.5t74.5 36.5q20 0 32.5 -14t12.5 -30z" id="x1D465"></path></g>
</svg>:H(i) film thickness. The inset shows the sample structure used in lifetime determination. The lines are guides for the eye. A constant deposition rate is observed for all samples in this series. Lifetime saturation is observed after 20 nm film deposition.</table>

International Journal of Photoenergy

fig2

Figure 2

Figure 2: Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide 

Figure 2 | Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide 