Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Figure 13

Effective lifetime as a function of time after deposition. The insets show sample structures and dimensions for both materials used in the degradation study. The passivation quality of a-SiO_𝑥:H(i) film (20 nm) hardly degrades even after one week of storage. As a comparison, lifetime degradation data of ICP a-Si:H(i) [24] (11.1 nm) is superposed in the same graph. The a-Si:H(i) passivation layer shows constant degradation of lifetime immediately after deposition.