Measured QSSPC lifetime of optimized a-:H(i) film as a function of minority carrier injection level. The calculation of effective surface recombination velocity is based on wafer thickness of our samples. The dashed line represents intrinsic limit of the 1 Ωcm wafer assuming no extrinsic recombination [27]. As a comparison, other high-quality passivation schemes from Mark and Andres [28, 29], Duttagupta et al. [30], Wan et al. [31], Mueller et al. [16, 18], and Ge et al. [10] are also shown in the graph. The inset shows the sample structure for ICP a-:H(i) passivation.
