Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Figure 1

(a) Illustration of processing unit structure of the SINGULAR-HET. The arrows indicate the direction for carrier rotation and transfer. (b) Illustration of the process cycle. The horizontal arrow indicates processing order and the vertical arrows represent the direction of deposition in each station. (c) Illustration of process station and plasma design for plasma stations in downward deposition configuration. After [25, 26].

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