Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

Table 2

DC and microwave properties of GaN DDR, GaN SDR, Si DDR, and SiC DDR diodes at sub-mm wave frequency band.

Material and structure	(10^8 V/m)	(V)	(%)	(THz)	(10^−3 S)	(Ω)	(mW)	(%)
GaN DDR	3.16	50.2	20.7	0.32	−2.415	−20.92	760	2.24
GaN SDR	3.46	44.5	21.0	0.38	−0.386	−9.97	95	6.34
Si DDR	0.757	12.2	5.89	0.30	−2.23	−9.82	41	20.45
SiC DDR	5.04	182	17.2	0.36	−0.699	−13.63	2890	18.27