Research Article
Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency
Table 2
DC and microwave properties of GaN DDR, GaN SDR, Si DDR, and SiC DDR diodes at sub-mm wave frequency band.
| Material and structure | (108 V/m) | (V) | (%) | (THz) | (10−3 S) | (Ω) | (mW) | (%) |
| GaN DDR | 3.16 | 50.2 | 20.7 | 0.32 | −2.415 | −20.92 | 760 | 2.24 | GaN SDR | 3.46 | 44.5 | 21.0 | 0.38 | −0.386 | −9.97 | 95 | 6.34 | Si DDR | 0.757 | 12.2 | 5.89 | 0.30 | −2.23 | −9.82 | 41 | 20.45 | SiC DDR | 5.04 | 182 | 17.2 | 0.36 | −0.699 | −13.63 | 2890 | 18.27 |
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