Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

Table 1

Design parameters of GaN DDR, GaN SDR, Si DDR, and SiC DDR diodes for operation in sub-mm wave band frequency around 0.35 THz.

Structures	Widths (nm)		Doping concentrations (10^23 m^−3)		Area (10^−11 m^2)
	n-side	p-side	n-side	p-side
GaN (DDR)	185	37	1.3	6.5	2.65
GaN (SDR)	185	—	1.3	—	0.68
Si (DDR)	117	117	3.5	3.5	2.86
SiC (DDR)	336	336	7.2	7.2	3.00