Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

<div>Noise measure characteristics of the GaN DDR and GaN SDR MITATT diodes.</div>

International Journal of Microwave Science and Technology

Figure 9: Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency 