Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

<div>Noise measure characteristics of the three DDR MITATT diodes.</div>

International Journal of Microwave Science and Technology

Figure 5: Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency 