Multi-layer 2 mil line technology has been increasingly required for VLSI and very high speed logic devices. This
technology makes it possible to shorten the length of interconnection lines between VLSI silicon chips. Thus the signal
propagation delay on the transmission lines can be minimized.Multi-layer 2 mil line technology research history, the new method and usages are discussed in this paper.

Tamio  Saito

Yoshikatsu  Fukumoto

Multi-Layer 2 Mil Line Technology

A new method for fabricating high density printed circuit boards has been investigated. The procedure used for
photoselective metal deposition on the substrate consists of five steps: adhesion treatment, sensitization, nucleation,
fog inhibition and electroless metal deposition. An adhesive coated substrate was sensitized by introducing an aqueous
solution containig anthraquinone sulfonic acid sodium salts, reducible noble metal salts and alcohol. The sensitized
substrate was then exposed through a mask to a u.v. light. The noble metal nuclei produced by exposure were
developed by electroless copper deposition after rinsing with aqueous solutions containing complex agents.
Electrically-conductive patterns thus obtained can be further intensified by second electroless plate making.

Katsuhiro  Takahashi

Kunihiro  Ikari

Jiro  Kano

Tsutomu  Takamura

Toshihiro  Ueki

Tsuguo  Yamaoka

Takahiro  Tsunoda

Photochemical Image Formation Process for High Density Printed
Circuit Patterns

In the 1970&#39;s, much development occurred in monolithic IC&#39;s and automatic insertion machines, which brought about
extensive changes among mass producers of electronic consumer products and greatly influenced the improvement of
quality and the saving of labor in production. The challenges of the next era are the achievement of the following four
objectives in addition to the quality improvement and labor saving objectives involved in the recent decade. 1) The
efficient use of material resources to eliminate waste, 2) elevation of reliability, 3) striving for uniform specifications for
components on a worldwide basis to achieve more rational and efficient operations, and 4) the creation of unique
products through new mounting and assembly techniques. Towards these objectives, a unique technology has been
developed which has been named &#8216;universal hybrid integrated circuits&#8217; (UHIC), for which the automatic production
system has been put into practical use. The various components used in assembling through this system are cylindrical
in shape and entirely new in concept. They are called &#8216;metal electrode facebonding&#8217; (MELF) type components. The
new production system has the capacity of mounting 600 components simultaneously and can handle circuit
boards up to a size of 330 millimeters per side. This means that a stereo unit or a color television set can easily be
assembled on one circuit board, which could be called &#8220;all-in-one UHIC&#8221;.

Mitsuo  Ohsawa

Automatic Production System for Circuit Boards With Universal Hybrid
Integrated Circuits

The Substrate Carrier System (S. C. System) is a new manufacturing technique for small size hybrid IC with IMST
(Insulated Metal Substrate Technology)substrate which is used for power hybrid IC (STK series). The point of this
system is to treat both substrate process and assembly process in the manufacturing process of hybrid IC, with several
IC substrates at the same time. In the printing process, multi-IC pattern are made on a large IMST substrate at the
same time and the substrate after completion of printing process are slit-punched to have the frame configuration
where individual IC substrates are conected by tie-bar. Moreover in the assembly process which involves
die-bonding and wire-bonding, the substrate is carried by the pitch of IC substrate, utilizing the frame construction,
which can provide the automatic processes.This Substrate Carrier System is applied to many kinds of hybrid IC for low-frequency applications as a system of
high reliability and productivity.

N.  Miura

Y.  Fuura

K.  Uchida

Development of Substrate Carrier System

This paper presents the evaluation results of thermocompression GANG Bonding of gold-plated TAB outer leads to
three kinds of metallized ceramic substrates. Gold-Selective Plating (GSP) substrates for multi-chip package, Thick
Film (TF) substrates for multi-chip package and Single Chip Packages (SCP) which have a trimetal combination of
refractory metal (tungsten), Nickel and Gold.The bonding parameters such as the bonding tool (thermode) temperature, pressure, bonding time and preheat
temperature were examined on each substrate to get optimum values. As the result, a relation between pull strength
and the lead deformation shows that the TAB leads should be bonded with 15&#8211;65 percent deformation, the recommended parameters are; the tool temperature of 380&#8211;430&#8451;, the bonding pressure ranging from 35 to
45 kg/mm2, with the preheat temperature of 150&#8451; and the bonding time from 1.0 to 2.5 seconds.The evaluation of initial bondability shows that TAB GANG Bonding has the capability of excellent bonding
strength; above 120 grams with standard deviation of less than 20 grams, and the necessity of OLB pads flatness; less
than &#177;12 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>&#x03BC;</mml:mi></mml:math>m for one ounce copper lead. The normal storage of the substrate and the lead does not affect the
bondability. And the results of accelerated aging test of 125&#8451;, 150&#8451; and 175&#8451; for more than 8,000 hours show
that a lifetime of greater than 70 years at 65&#8451; operating temperature is predicted. The effective activation energy for
the pull strength degradation is 0.86&#8211;1.05 eV. This is in reasonable agreement with predictions for interdiffusion of
Cu&#8211;Au. And no significant degradation of the electric resistance was observed on the GSP samples.The feasibility and the high reliability of the GANG Bonding for gold-plated TAB outer leads were confirmed.

M.  Nitta

T.  Tsuge

Y.  Hiki

R.  Kato

Process and Accelerated Aging Test of GANG Bonding for Gold-Plated
TAB Outer Leads

D. S. Campbell

Editorial

This paper reports results of investigations on edge guided mode circulators and junction circulators using thick film
ferrimagnetic pastes in the frequency range from 2 to 12 GHz. Performance of the circulators realized with the thick
film ferrimagnetic pastes will be compared with those made on YIG substrates in respect of insertion loss, isolation
and bandwidth. The study shows that while good isolation bandwidth is obtainable with edge guided mode circulators,
the insertion loss remains high.

Chinmay. K. Maiti

D. Bhattacharyya

N. B. Chakrabarti

Fabrication of Nonreciprocal Microwave Components Using Thick Film
Ferrimagnetic Pastes

The use of thick film passive networks and hybrid integrated circuits by the Bell System is described in this paper.
Included is a discussion of how attributes of thick films such as a large resistance range, high power handling
capability, a bipolar capacitor and multilevel interconnection capability are used to provide a range of circuit
properties that supplement the properties available in a well-established thin film technology. Design aids permitting
a rapid transition from an electrical schematic to a finished circuit, special laser trimming procedures and material
blending procedures are described for resistor networks. Also included are assembly and packaging techniques
suitable for high reliability and low cost manufacturing. Several hybrid integrated circuits which benefit from the use
of thick films are described in terms of their particular electrical or structural requirements. Included is a family of
power converter circuits illustrating the advantages of a modular approach to circuit design in which functional
resistor trimming provides a number of different circuit characteristics. Several applications involving the use of thick
films in combination with thin films to provide special hybrid circuit properties not available from thin films alone are
described. These and other possible uses of the two technologies in the same circuit are discussed in terms of
combining the best properties of each technology to provide higher reliability and lower circuit cost. Finally, the
future for the use of thick films in the Bell System is discussed.

William B. Grupen

Howard M. Cohen

Thick Film Circuits for Telecommunications Equipment

A new type of film driver (NFD) has been developed using thin film integrated circuits technologies. The realized
driver was one-tenth as small as that of a conventional driver in volume. The NFD has employed the tantalum nitride
(Ta2N) thin film resistors with low TCR values in order to achieve high accuracy. The NFD was housed in a
hermetically-sealed metal case with a size of 39 &#215; 26 &#215; 6 mm. Resistors of NFD circuits were adjusted by laser
trimming. DC levels of the transistor circuits, were adjusted by functional laser trimming. When the developed NFD is
operated at medium output voltage of 4 Vp-p for 5 years at circumstance temperature of 40&#8451;, the resistance change
of the resistors which control the accuracy of the output voltage is predicted to be less than 0.05&#37;, which corresponds
to the drift of the output level within 2 mV.

Masato  Murata

Shohei  Akitake

Hitoshi  Yamaguchi

Hajime  Sasaki

Shiro  Otani

A New Type of Film Driver

The development of thick-film functional devices having oscillation, negative resistance, switching, memory and so on
has been needed.New non-volatile memory devices manufactured of Nb2O5-based thick-film have now been created. The thick-film
devices have been prepared by using common thick-film technology such as screen printing, drying and firing. The
characteristics and the operation of the devices are as follows:When a dc voltage is applied to the devices, rapid resistance change, so called switching effect, occurs. The devices
have low resistance state. Even when the voltage is removed completely, the devices do not return to high resistance
state and keep low resistance state. However, when alternating voltage is impressed upon the devices, the low
resistance state goes to the high resistance state. The recovery time of the resistance state depends upon the frequency
of applied ac voltage. The higher frequency voltage that is applied, the sooner the recovery time becomes. The
threshold voltage exponentially increases with higher frequency of an applied ac voltage.In addition to the memory effect, the Nb2O5-based thick-film devices have a switching and oscillation characteristic.

Y.  Taketa

O.  Abe

M.  Haradome

New Thick Film Functional Devices

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components

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Active and Passive Electronic Components

International Microelectronics Conference. Part I

International Microelectronics Conference. Part I

Articles

Multi-Layer 2 Mil Line Technology

Photochemical Image Formation Process for High Density Printed Circuit Patterns

Automatic Production System for Circuit Boards With Universal Hybrid Integrated Circuits

Development of Substrate Carrier System

Process and Accelerated Aging Test of GANG Bonding for Gold-Plated TAB Outer Leads

Editorial

Fabrication of Nonreciprocal Microwave Components Using Thick Film Ferrimagnetic Pastes

Thick Film Circuits for Telecommunications Equipment

A New Type of Film Driver

New Thick Film Functional Devices