This paper presents novel multilayer tuneable high <svg     style="vertical-align:-2.2932pt;width:13.175px;" id="M1" height="14.3125" version="1.1" viewBox="0 0 13.175 14.3125" width="13.175"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
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</svg>-filters based on hairpin resonators including ferroelectric materials. This configuration allows the miniaturization of these filters to a size that makes them suitable for chip and package integration and narrow-band applications. The main focus was miniaturizing filters with coupled loops using multilayer dielectric substrates. A further goal was to increase the quality factor of these distributed filters by embedding high dielectric materials in a multilayer high- and low-<svg     style="vertical-align:-0.1638pt;width:8.6750002px;" id="M2" height="12.4375" version="1.1" viewBox="0 0 8.6750002 12.4375" width="8.6750002"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path id="x1D458" d="M480 416q0 -21 -18 -41q-9 -11 -17 -7q-20 9 -42 9q-62 0 -140 -78q23 -69 88 -192q17 -31 27 -42t20 -11q16 0 62 46l17 -20q-64 -92 -119 -92q-35 0 -70 66q-41 73 -84 187q-36 -30 -62 -61q-27 -115 -35 -172q-41 -8 -78 -20l-6 6l140 612q7 28 0.5 34t-37.5 7l-34 1&#xA;l5 26q38 4 74 13.5t57 17t25 7.5q12 0 4 -32l-104 -443h2q35 38 97 93q39 35 65.5 56t62 41.5t58.5 20.5q19 0 30.5 -10t11.5 -22z" /></g>

		
	
</svg> (dielectric constant) substrate that is supported by LTCC technology. An improved W-shape bandpass filter was proposed with a wide stopband and approximately  5&#x25;  bandwidth.

Aly H. Aly

Badawy El-Sharawy

Adalbert Beyer

Modeling and Measurements of Novel Monolithic Filters

T. S. Kalkur

Tibor Berceli

Fahrettin Yakuphanoglu

Active and Passive Microwave Devices and Circuits

This paper describes the design and fabrication of a Ka Band PLL DRO having a fundamental oscillation frequency of 19.250 GHz, used as local oscillator in the low-noise block of a down converter (LNB) for an EHF band receiver. Apposite circuital models have been created to describe the behaviour of the dielectric resonator and of the active component used in the oscillator core. The DRO characterization and measurements have shown very good agreement with simulation results. A good phase noise performance is obtained by using a very high <i>Q</i> dielectric resonator.

S. Coco

F. Di Maggio

A. Laudani

I. Pomona

Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver

A novel layout of leaky-wave antennas based on tapered design has been proposed 
                  and investigated. The new tapered leaky-wave antenna (LWA) was designed running a simple procedure 
                  which uses an FDTD code, and using a suitable metal walls down the centerline along the length of the 
                  antenna connecting the conductor strip and the ground plane, which allows to use only half of the structure, 
                  the adoption of a simple feeding, and the reduction of sidelobes. The good performance of this new 
                  tapered microstrip LWA, with reference to conventional uniform microstrip LWAs, is mainly the 
                  wider band of 33% for 
                  VSWR <svg style="vertical-align:-0.04095pt;width:22.987499px;" id="M1" height="10.975" version="1.1" viewBox="0 0 22.987499 10.975" width="22.987499" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,10.862)"><path id="x3C" d="M512 -3l-437 233v51l437 233v-58l-378 -200v-2l378 -199v-58z" /></g><g transform="matrix(.017,-0,0,-.017,14.749,10.862)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g></svg>, higher gain (12 dBi), and higher efficiency (up to 85%). Furthermore, from the theoretical analysis we can see that, decreasing the relative dielectric constant of the substrate, the bandwidth of the leaky-wave antenna becomes much wider, improving its performance.

Onofrio Losito

High Efficiency and Broadband Microstrip Leaky-Wave Antenna

This paper presents the design, construction, and testing of grounded frequency selective surface (FSS) array as a diffuser for destroying millimeter wave  coherence which is used to eliminate speckle in active millimeter wave imaging. To create stochastically independent illumination patterns, we proposed a diffuser based on random-phase distributions obtained by changing the incident frequency. The random-phase diffuser was obtained by mixing up the phase relations between the cells of a deterministic function (e.g., beam splitter). The slot length of FSS is the main design parameter used to optimize the phase shifting properties of the array. The critical parameters of the diffuser array design, such as phase relation with slot lengths, losses, and bandwidth, are discussed. We designed the FSS arrays with finite integral technique (FIT), fabricated by etching technique, and characterized the <i>S</i>-parameters with a free-space MVNA, and measured the radiation patterns with a BWO in motorized setup.

Saiful Islam

Johan Stiens

Gert Poesen

Irina Jaeger

Roger Vounckx

Passive Frequency Selective Surface Array as a Diffuser for Destroying Millimeter Wave Coherence

The stop-band filter with the new band-rejection element is proposed. The element is a coaxial waveguide with the slot in the centre conductor. In the frame of this research, the numerical and experimental investigations of the amplitude-frequency characteristics of the filter are carried out. It is noted that according to the slot parameters the two typical resonances (half-wave and quarter-wave) can be excited. The rejection band of the single element is defined by the width, depth, and dielectric filling of the slot. Fifth-order Chebyshev filter utilizing the aforementioned element is also synthesized, manufactured, and tested. The measured and simulated results are in good agreement. The experimental filter prototype exhibits the rejection band 0.86&#x2009;GHz at the level &#x02212;40&#x2009;dB.

R. E. Chernobrovkin

I. V. Ivanchenko

A. M. Korolev

N. A. Popenko

K. Yu. Sirenko

The Novel Microwave Stop-Band Filter

The main steps for characterization and measurement of microwave absorbent materials in the 1–10 GHz range are introduced. The coaxial reflection-transmission type of material parameter measurement is analyzed in detail and the main measurement error is corrected. The microscopic material particle parameter measurement concept is also presented using different mixing rule laws to determine the material parameters of the single particles from the macroscopic parameters. Two-dimensional FDTD simulations have been used to model the behavior of mixed electric and magnetic type of material.

Lajos Nagy

Material Parameter Measurements for Microwave Antireflection Coating Development

The problem of side lobe suppression (SLS) in printed antenna arrays has been investigated in the paper. Influence of several factors that make difficult design and realization of antenna arrays with relatively high SLS has been analyzed. We introduced a new type of printed antenna array with symmetrical pentagonal dipoles and symmetrical tapered feed network with Chebyshev distribution enabling SLS better than 34&#x02009;dB in E-plane. Agreement between simulated and measured results is very good. The antenna is suitable for integration with other microwave circuits. Presented antenna is low cost and very simple for realization.

Aleksandar Ne&#353;i&#263;

Ivana Radnovi&#263;

Zoran Mi&#263;i&#263;

Printed Antenna Arrays with High Side Lobe Suppression

The dynamic performance of wide-bandgap 4H-SiC based double drift region (<svg style="vertical-align:-3.50804pt;width:66.537498px;" id="M1" height="18.487499" version="1.1" viewBox="0 0 66.537498 18.487499" width="66.537498" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,14.05)"><path id="x1D45D" d="M570 304q0 -108 -87 -199q-40 -42 -94.5 -74t-105.5 -43q-41 0 -65 11l-29 -141q-9 -45 -1.5 -58t45.5 -16l26 -2l-5 -29l-241 -10l4 26q51 10 67.5 24t26.5 60l113 520q-54 -20 -89 -41l-7 26q38 28 105 53l11 49q20 25 77 58l8 -7l-17 -77q39 14 102 14q82 0 119 -36&#xA;t37 -108zM482 289q0 114 -113 114q-26 0 -66 -7l-70 -327q12 -14 32 -25t39 -11q59 0 118.5 81.5t59.5 174.5z" /></g><g transform="matrix(.012,-0,0,-.012,10.138,5.887)"><path id="x2B" d="M535 230h-212v-233h-58v233h-213v50h213v210h58v-210h212v-50z" /></g><g transform="matrix(.012,-0,0,-.012,17.122,5.887)"><use xlink:href="#x2B" /></g><g transform="matrix(.017,-0,0,-.017,24.737,14.05)"><use xlink:href="#x1D45D" /></g><g transform="matrix(.017,-0,0,-.017,34.818,14.05)"><path id="x1D45B" d="M495 86q-46 -47 -87 -72.5t-63 -25.5q-43 0 -16 107l49 210q7 34 8 50.5t-3 21t-13 4.5q-35 0 -109.5 -72.5t-115.5 -140.5q-21 -75 -38 -159q-50 -10 -76 -21l-6 8l84 340q8 35 -4 35q-17 0 -67 -46l-15 26q44 44 85.5 70.5t64.5 26.5q35 0 10 -103l-24 -98h2&#xA;q42 56 97 103.5t96 71.5q46 26 74 26q9 0 16 -2.5t14 -11.5t9.5 -24.5t-1 -44t-13.5 -68.5q-30 -117 -47 -200q-4 -19 -3.5 -25t6.5 -6q21 0 70 48z" /></g><g transform="matrix(.017,-0,0,-.017,43.351,14.05)"><use xlink:href="#x1D45B" /></g><g transform="matrix(.012,-0,0,-.012,51.888,5.887)"><use xlink:href="#x2B" /></g><g transform="matrix(.012,-0,0,-.012,58.872,5.887)"><use xlink:href="#x2B" /></g></svg>) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experiment establishes the potential of SiC based IMPATT diode as a high power (<svg style="vertical-align:-0.16379pt;width:66.212502px;" id="M2" height="16.049999" version="1.1" viewBox="0 0 66.212502 16.049999" width="66.212502" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,15.775)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g><g transform="matrix(.017,-0,0,-.017,8.222,15.775)"><path id="x2E" d="M113 -12q-24 0 -39.5 16t-15.5 42q0 24 16 40.5t40 16.5t40 -16.5t16 -40.5q0 -26 -16 -42t-41 -16z" /></g><g transform="matrix(.017,-0,0,-.017,12.098,15.775)"><path id="x35" d="M153 550l-26 -186q79 31 111 31q90 0 141.5 -51t51.5 -119q0 -93 -89 -166q-85 -69 -173 -71q-32 0 -61.5 11.5t-41.5 23.5q-18 17 -17 34q2 16 22 33q14 9 26 -1q61 -50 124 -50q60 0 93 43.5t33 104.5q0 69 -41.5 110t-121.5 41q-53 0 -102 -20l38 305h286l6 -8&#xA;l-26 -65h-233z" /></g><g transform="matrix(.017,-0,0,-.017,24.031,15.775)"><path id="xD7" d="M528 54l-36 -38l-198 201l-198 -201l-36 38l197 200l-197 201l36 38l198 -202l198 202l36 -38l-197 -201z" /></g><g transform="matrix(.017,-0,0,-.017,37.783,15.775)"><path id="x31" d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" /></g><g transform="matrix(.017,-0,0,-.017,45.942,15.775)"><path id="x30" d="M241 635q53 0 94 -28.5t63.5 -76t33.5 -102.5t11 -116q0 -58 -11 -112.5t-34 -103.5t-63.5 -78.5t-94.5 -29.5t-95 28t-64.5 75t-34.5 102.5t-11 118.5q0 58 11.5 112.5t34.5 103t64.5 78t95.5 29.5zM238 602q-32 0 -55.5 -25t-35.5 -68t-17.5 -91t-5.5 -105&#xA;q0 -76 10 -138.5t37 -107.5t69 -45q32 0 55.5 25t35.5 68.5t17.5 91.5t5.5 105t-5.5 105.5t-18 92t-36 68t-56.5 24.5z" /></g><g transform="matrix(.012,-0,0,-.012,54.112,7.613)"><use xlink:href="#x31" /></g><g transform="matrix(.012,-0,0,-.012,59.824,7.613)"><use xlink:href="#x31" /></g></svg> <svg style="vertical-align:-0.15013pt;width:42.412498px;" id="M3" height="16.025" version="1.1" viewBox="0 0 42.412498 16.025" width="42.412498" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,15.775)"><path id="x57" d="M956 650v-28q-52 -7 -69 -22.5t-39 -77.5q-60 -175 -165 -533h-31l-175 499h-2l-163 -499h-31l-164 535q-18 60 -36 76.5t-65 21.5v28h243v-28q-53 -7 -63 -18.5t3 -49.5l122 -412h2l162 499h29l175 -500h2q87 277 113 401q12 45 0.5 59t-68.5 21v28h220z" /></g><g transform="matrix(.017,-0,0,-.017,15.106,15.775)"><path id="x6D" d="M797 0h-214v26q46 5 58 17.5t12 63.5v167q0 116 -88 116q-48 0 -112 -52q3 -18 3 -42v-195q0 -46 11 -58t53 -17v-26h-214v26q48 5 59.5 17t11.5 60v172q0 115 -88 115q-47 0 -109 -52v-235q0 -47 10 -59.5t48 -17.5v-26h-211v26q50 5 62.5 17t12.5 60v207q0 48 -9 59.5&#xA;t-52 18.5v23q79 14 139 41v-81q3 2 29 20.5t44 29.5q45 28 81 28t66 -22t46 -61q25 20 83 57q39 26 76 26q59 0 93 -40t34 -113v-193q0 -49 10.5 -60.5t54.5 -16.5v-26z" /></g><g transform="matrix(.012,-0,0,-.012,29.025,7.613)"><path id="x2212" d="M535 230h-483v50h483v-50z" /></g><g transform="matrix(.012,-0,0,-.012,36.01,7.613)"><use xlink:href="#x32" /></g></svg>) terahertz source. The parasitic series resistance in the device is found to reduce the RF power output by 10.7%. The effects of external radiation on the simulated diode are also studied.  It is found that (i) the negative conductance and (ii) the negative resistance of the diode decrease, while, the frequency of operation and the quality factor shift upward under photoillumination. Holes in 4H-SiC based IMPATT are found to dominate the modulation activities. The inequality in the magnitude of electron and hole ionization rates in the semiconductors may be correlated with these findings.

Moumita Mukherjee

Nilratan Mazumder

Sitesh Kumar Roy

Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Silicon-based radio-frequency integrated circuits are becoming more and more competitive in wide-band frequency range. An essential component of these ICs is on-chip (integrated) transformer. It is widely used in mobile communications, microwave integrated circuits, low-noise amplifiers, active mixers, and baluns. This paper deals with the design, simulation, and analysis of novel fractal configurations of the primary and secondary coils of the integrated transformers. Integrated stacked transformers, which use fractal curves (Hilbert, Peano, and von Koch) to form the primary and secondary windings, are presented. In this way, the occupied area on the chip is lower and a number of lithographic processes are decreased. The performances of the proposed integrated transformers are investigated with electromagnetic simulations up to 20 GHz. The influence of the order of fractal curves and the width of conductive lines on the inductance and quality factor is also described.

Goran Stojanovi&#x107;

Milan Radovanovi&#x107;

Vasa Radoni&#x107;

A New Fractal-Based Design of Stacked Integrated Transformers

About this journal

<p><em>Active and Passive Electronic Components </em>provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.</p>


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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components

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Active and Passive Electronic Components

Active and Passive Microwave Devices and Circuits

Active and Passive Microwave Devices and Circuits

Articles

Modeling and Measurements of Novel Monolithic Filters

Active and Passive Microwave Devices and Circuits

Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver

High Efficiency and Broadband Microstrip Leaky-Wave Antenna

Passive Frequency Selective Surface Array as a Diffuser for Destroying Millimeter Wave Coherence

The Novel Microwave Stop-Band Filter

Material Parameter Measurements for Microwave Antireflection Coating Development

Printed Antenna Arrays with High Side Lobe Suppression

Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

A New Fractal-Based Design of Stacked Integrated Transformers