Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell

<div>Histogram plot of RSNM from Monte Carlo simulation (1K samples) along read disturbance analysis using VTC of (VTC’s) of (a) conventional memory cell, (b) FD 10-ST memory cell, (c) SSDF 9T-ST memory cell, and (d) proposed BSRWA 10T memory cell.</div>

Active and Passive Electronic Components

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Figure 2: Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell 