Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell

<div>Write trip current occurrence plots extraction for all SRAM cells using Monte Carlo simulation at <i>V</i><sub>BLB</sub> = <i>V</i><sub>DD</sub>.</div>

Active and Passive Electronic Components

fig11

Figure 11

Figure 11: Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell 