A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications

<div>VTC curve for the proposed SRAM cell. (a) VTC curve at vdd = 0.9 v and (b) VTC curve at vdd = 0.8 v (c) VTC curve at vdd = 0.7 v (d) VTC curve at vdd = 0.6 v.</div>

Active and Passive Electronic Components

fig11

Figure 11

Figure 11: A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications 