Research Article
Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield
| Shield structure | Breakdown voltage (V) | V th (V) | R dson (ohm∗mm) | I dsat (A/mm) |
| Base line | 67.82 | 1.425 | 14.239 | 0.163 | Length of Gsh1 −0.2 µm | 67.94 | 1.411 | 14.342 | 0.164 | Length of Gsh1 +0.2 µm | 67.81 | 1.421 | 14.276 | 0.163 | Length of Gsh2 −0.2 µm | 68.01 | 1.412 | 14.238 | 0.167 | Length of Gsh2 +0.2 µm | 66.94 | 1.429 | 14.192 | 0.162 | Oxide thickness of Gsh1 −0.02 µm | 68.13 | 1.43 | 14.343 | 0.159 | Oxide thickness of Gsh1 +0.02 µm | 68.33 | 1.408 | 14.117 | 0.169 | Oxide thickness of Gsh2 −0.02 µm | 67.59 | 1.427 | 14.222 | 0.162 | Oxide thickness of Gsh2 +0.02 µm | 68.32 | 1.419 | 14.272 | 0.164 |
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