Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

Table 1

Physical parameters assumed in calculations [12, 13].

Notations	Values	Comments
	0.92	Longitudinal mass of electrons
	0.19	Transverse mass of electrons
	0.49	Heavy holes
	0.16	Light holes
	9.1 × 10^−31 [kg]	Free electrons
(@300 K)	9.7 × 10^9 [cm^−3]	Bulk Si
(@300 K)	1.1 [eV]
Permittivity of Si ()	12 [F/cm]
Permittivity of SiO2 ()	3.8 [F/cm]
Permittivity of vacuum ()	8.9 × 10^−14 [F/cm]