Abstract
Substituting glass by SiO2 in thick film resistors results in a small increase of R□, a decrease of dR□/dT and an
increase of d2R□/dT2 (at room temperature). From these experimental results it follows that substituting glass
by SiO2 leads to an increase in the resistance of the tunnel barrier, determining the resistivity of the TFRs. The
other microscopic quantities, like charging energy and