Performance of All-Optical XNOR Gate Based on Two-Photon Absorption in Semiconductor Optical Amplifiers

Table 1

List of input signal and SOA parameters treated as fixed throughout the simulation analysis, by symbol, definition, and value.

Symbol	Definition	Value
	SOAs unsaturated power gain	30 dB
	Input pulse energy	0.01 pJ
	Pulsewidth	0.5 ps
	SOA carrier lifetime	300 ps
	Temperature relaxation rate	0.3 ps
	Carrier-carrier scattering rate	0.1 ps
	Carrier heating nonlinear gain suppression factor	0.08 W^−1
	Spectral hole burning nonlinear gain suppression factor	0.08 W^−1
	Traditional linewidth enhancement factor	5
	Carrier heating alpha factor	1
	Spectral hole-burning alpha factor	0
	Saturation power	30 mW
	Linewidth enhancement factor due to TPA	6
	TPA coefficient	30 cm/GW