Research Article
Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method
Table 1
Porosity and thickness of samples.
| Sample no. | Substrate | Current density (mA/cm2) | Etching time (min) | Porosity (%) | Thickness (μm) |
| 1 | p-Si | 30 | 10 | 62.37 | 11.53 | 2 | p-Si | 30 | 20 | 72.02 | 22.84 | 3 | p-Si | 30 | 30 | 76.72 | 33.35 | 4 | p-Si | 30 | 40 | 79.13 | 45.00 | 5 | p-Si | 30 | 50 | 79.68 | 57.21 | 6 | p-Si | 30 | 60 | 80.20 | 69.20 |
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