Light Emission from Rare-Earth Doped Silicon Nanostructures

Table 1

Summary of the deposition parameters and their values for the depositions in this study.

Dopant type	RE concentration [at.%]	Si concentration [at.%]	Forwarded power [W]	Reflected power [W]	SiH4 flow rate	O2 flow rate	Ar flow rate	RE cell temp [^°C]
Tb	0.4^(2)	32	420	10	7	24	20	160
	0.8^(2)	32	420	10	7	24	30	160
	0.1^(2)	36	608	7	20	60	25	160
	0.2^(2)	38	327	27	20	56	25	156
	0.3^(2)	36	500	5	20	56	25	153
Ce	0.01^(2)	33	510	5	11	78	12	100
	0.1^(3)	32	507	7	4	40	25	180
	1.0^(3)	32	509	7	2	30	10	200
	0.04^(2)	40	515	5	25	70	12	161

⁽²⁾ The sample was deposited using mass flow controller 1, the corresponding flow rate unit is mV.
⁽³⁾ The sample was deposited using mass flow controller 2, the corresponding flow rate unit is sccm.