External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende In_xGa_1−xN/GaN Symmetric Coupled Quantum Dots

Figure 6

The ground-state donor binding energy in a ZB /GaN symmetric coupled QDs as a function of the impurity position for  nm,  nm,  nm,  nm, for different external electric field F = 0, 30 kV/cm, and 50 kV/cm.