Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Figure 4

A hole mobility of 725 cm²/Vs was achieved in Ge/GeO₂ gate stack with long LOA, which is 3.5 times higher than Si universal mobility. In case of electron mobility, Ge/GeO₂/Y₂O₃ gate stack shows the highest electron mobility of 1920 cm²/Vs. Both are record-high values of Ge MOSFETs [11].