Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

<div>High-resolution cross-sectional transmission electron microscopy (HR-TEM) image of ALD-Al<sub>2</sub>O<sub>3</sub> on Ge structure: (a) without OPO treatment; (b) OPO treatment for 3 min; and (c) OPO treatment for 5 min [<a href="/journals/acmp/2015/639218/#B45">46</a>].</div>

Advances in Condensed Matter Physics

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Figure 11

Figure 11: Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs 