Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

<div><svg height="9.01192pt" id="M50" style="vertical-align:-0.2063904pt" version="1.1" viewbox="-0.0498162 -8.80553 8.93363 9.01192" width="8.93363pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M690 629C653 643 577 667 483 667C225 667 24 528 24 292C24 92 174 -17 367 -17C448 -17 534 1 570 10C592 34 642 131 658 174C648 180 639 186 629 192C562 89 499 21 382 21C223 21 130 138 130 298C130 467 255 627 462 627C582 627 643 589 650 462L686 466C689 517 688 580 690 629Z" id="g50-68"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="714" vert-adv-y="714"></glyph.data></g></svg>-<svg height="8.80314pt" id="M51" style="vertical-align:-0.2063999pt" version="1.1" viewbox="-0.0498162 -8.59674 9.46864 8.80314" width="9.46864pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g></svg> characteristics (1 MHz) of Al<sub>2</sub>O<sub>3</sub>/Ge MOScap improved significantly with the OPO treatment. The inset shows the reduction of EOT versus the OPO treatment time [<a href="/journals/acmp/2015/639218/#B45">46</a>].</div>

Advances in Condensed Matter Physics

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Figure 10

Figure 10: Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs 