Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Figure 7

Schematic view of the switching traps in pMOSFETs. Under low gate bias, the switching traps in oxide layer could only be recovered by exchanging hole with channel and induce only -RTN. Under the high gate bias, part of generated switching traps can capture and hold the hole while some others transform the hole from the channel to gate by TAT mechanism.