Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy

<div>The schematic representation of the experiment on the investigation of the resistive switching effect in the YSZ/<i>n</i><sup>+</sup>-Si films by Conductive Atomic Force Microscopy. 1—AFM laser; 2—quadrant photodetector; 3—Pt-coated cantilever; 4—filament.</div>

Advances in Condensed Matter Physics

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Figure 1

Figure 1: Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy 

Figure 1 | Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy 